Physics at Virginia

"Oxide Nanoelectronics on Demand"

Cheng Cen , IBM
[Host: Seunghun Lee]
Complex oxides and their heterostructures have exhibited a great collection of novel functionalities and are considered one of the most promising candidate for next generation technological materials. At the interface formed between LaAlO3 and SrTiO3, by scanning a biased conducting atomic force microscope (AFM) tip along a programmed trajectory at room temperature, we can reversibly control in nanoscale the metal-insulator transition. With this technique, a variety of rewritable nanoscale devices and structures have been studied. These nanostructures, which are mainly assembled from basic elements including conductive wires and dots with characteristic dimensions just a few nanometers, show great performance as field effect transistors, nanodiodes and photodetectors. At low temperatures, a variety of electronic, spintronic and superconducting properties are observed, with enormous potential for exploitation in quantum devices.
Thursday, February 16, 2012
3:30 PM
Physics Building, Room 204
Note special date.
Note special room.

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